PECVD

Introduction

Equipment needed

  • Applied Material P5000 chamber D (coral name: pecvd)
  • Nanospec thickness measurement

Preliminaries

The tool temperature is set to 300°C as standard for all recipes. As no material such as resists, polymers, or anything that would degas and melt at this temperature is allowed in this chamber. Offenders will see their qualification cancelled.An deposition recipe in the PECVD chamber must always be followed by a cleaning recipe once the wafer is out of the chamber.

Process for Oxide PECVD

Recipe Power Pressure SiH4 N2O Temp Dep Rate
OX DEP 300 DEG 125W 2.8Torr 60sccm 1200sccm 300°C 102A/s

Process monitoring

Deposition Rate vs Power

Power [W] Deposition Rate [A/s] - 2013-01-01 Deposition Rate [A/s] - 2014-07-07
25 31.5  
75 56.6  
125 69.4 102
175 60.6  
225 54.0  

Recipe

RECIPE NAME OX DEP 300 DEG    
VERSION 1,00    
RECORD DATE 28-avr-10    
BY PIERRE HUET    
       
STEP NUMBER, NAME 1, SOAK 2, DEP 3, PUMP
CHAMBER SELECTION D ONLY D ONLY D ONLY
STEP END CONTROL BY TIME BY TIME BY TIME
MAXIMUM STEP TIME 30.0 SECONDS 30.0 SECONDS 60.0 SECONDS
END POINT SELECTION NO ENDPOINT NO ENDPOINT NO ENDPOINT
PRESSURE THROTTLE FULLY OPEN SERVO 2.8 TORR THROTTLE FULLY OPEN
PRESSURE RAMP RATE 0 STEPS/SECOND 0 TORR/SECOND 0 STEPS/SECOND
RF POWER, MATCH, MODE 0 W, AUTO, B-TO-B 125 W, AUTO, B-TO-B 0 W, AUTO, B-TO-B
RF TUNE SET POINT 0.0 V 0.0 V 0.0 V
RF2 POWER, MATCH 0 W, AUTO 0 W, AUTO 0 W, AUTO
DPA RF OFF OFF OFF
SUSCEPTOR TEMPERATURE 300 C (WAFER ~ 278 C) 300 C (WAFER ~ 267 C) 300 C (WAFER ~ 278 C)
TEMPERATURE RAMP 0.0 C/SEC 0.0 C/SEC 0.0 C/SEC
PURGE FLOW OFF OFF OFF
SUSCEPTOR SPACING 350 MILS 350 MILS 350 MILS
CHAMBER BYPASS OFF OFF OFF
SIH4 - 60 SCC -
N2O - 1200 SCC -

Characterization

Surface roughness

1um silicon oxide PECVD was deposited onto a silicon sample and AFM was used to measure the surface quality.

Roughness is about 10nm. (measurements done by Tina Muller <tina.muller@mail.mcgill.ca>)